technische information / technical information igbt-module igbt-modules BSM150GAL120DLC h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1200 v kollektor-dauergleichstrom t c = 80 c i c,nom. 150 a dc-collector current t c = 25 c i c 300 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 300 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 1,2 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 150 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 300 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 4,8 ka 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c v ce sat - 2,1 2,6 v collector-emitter saturation voltage i c = 150a, v ge = 15v, t vj = 125c - 2,4 2,9 v gate-schwellenspannung gate threshold voltage i c = 6ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v...+15v q g - 1,6 - m c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -11-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,7 - nf kollektor-emitter reststrom v ce = 1200v, v ge = 0v, t vj = 25c i ces - 7 184 m a collector-emitter cut-off current v ce = 1200v, v ge = 0v, t vj = 125c - 700 - m a gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: mark mnzer date of publication: 07.02.2000 approved by: m.hierholzer revision: 2 1(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 5,6 w , t vj = 25c t d,on - 0,05 - s v ge = 15v, r g = 5,6 w , t vj = 125c - 0,06 - s anstiegszeit (induktive last) i c = 150a, v ce = 600v rise time (inductive load) v ge = 15v, r g = 5,6 w , t vj = 25c t r - 0,05 - s v ge = 15v, r g = 5,6 w , t vj = 125c - 0,07 - s abschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 600v turn off delay time (inductive load) v ge = 15v, r g = 5,6 w , t vj = 25c t d,off - 0,57 - s v ge = 15v, r g = 5,6 w , t vj = 125c - 0,57 - s fallzeit (induktive last) i c = 150a, v ce = 600v fall time (inductive load) v ge = 15v, r g = 5,6 w , t vj = 25c t f - 0,04 - s v ge = 15v, r g = 5,6 w , t vj = 125c - 0,05 - s einschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 5,6 w , t vj = 125c, l s = 60nh e on - 17 - mws abschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-off energy loss per pulse r g = 5,6 w , t vj = 125c, l s = 60nh e off - 18 - mws kurzschlu?verhalten t p 10sec, v ge 15v, r g = 5,6 w sc data t vj 125c, v cc =900v, v cemax =v ces -l sce di/dt i sc - 950 - a modulinduktivit?t stray inductance module l sce - 25 - nh modul leitungswiderstand, anschlsse C chip module lead resistance, terminals C chip t c =25c r cc+ee - 0,6 - m w charakteristische werte / characteristic values inversdiode / free-wheel diode min. typ. max. durchla?spannung i f = 150a, v ge = 0v, t vj = 25c v f - 1,8 2,3 v forward voltage i f = 150a, v ge = 0v, t vj = 125c - 1,7 2,2 v rckstromspitze i f = 150a, - di f /dt = 3100a/sec peak reverse recovery current v r = 600v, vge = -15v, t vj = 25c i rm - 180 - a v r = 600v, vge = -15v, t vj = 125c - 220 - a sperrverz?gerungsladung i f = 150a, - di f /dt = 3100a/sec recovered charge v r = 600v, vge = -15v, t vj = 25c q r - 17 - as v r = 600v, vge = -15v, t vj = 125c - 32 - as abschaltenergie pro puls i f = 150a, - di f /dt = 3100a/sec reverse recovery energy v r = 600v, vge = -15v, t vj = 25c e rec - 4 - mws v r = 600v, vge = -15v, t vj = 125c - 10 - mws chopperdiode / chopper diode min. typ. max. durchla?spannung i f = 200a, v ge = 0v, t vj = 25c v f - 1,8 2,3 v forward voltage i f = 200a, v ge = 0v, t vj = 125c - 1,7 2,2 v rckstromspitze i f = 200a, - di f /dt = 4000a/sec peak reverse recovery current v r = 600v, vge = -15v, t vj = 25c i rm - 240 - a v r = 600v, vge = -15v, t vj = 125c - 300 - a sperrverz?gerungsladung i f = 200a, - di f /dt = 4000a/sec recovered charge v r = 600v, vge = -15v, t vj = 25c q r - 23 - as v r = 600v, vge = -15v, t vj = 125c - 42 - as abschaltenergie pro puls i f = 200a, - di f /dt = 4000a/sec reverse recovery energy v r = 600v, vge = -15v, t vj = 25c e rec - 6 - mws v r = 600v, vge = -15v, t vj = 125c - 14 - mws 2(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,1 k/w thermal resistance, junction to case diode/diode, dc - - 0,25 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module l paste = 1 w/m * k / l grease = 1 w/m * k r thck - 0,01 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 150 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance 11 mm cti comperative tracking index 275 anzugsdrehmoment f. mech. befestigung m1 3 6 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m6 m2 2,5 5 nm terminal connection torque gewicht weight g 420 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC i c [a] v ce [v] i c [a] v ce [v] 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tj = 25c tj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 17v vge = 15v vge = 13v vge = 11v vge = 9v vge = 7v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC i c [a] v ge [v] i f [a] v f [v] 0 50 100 150 200 250 300 56789101112 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tj = 25c tj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC e [mj] i c [a] e [mj] r g [ w ] 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15v, r gon = r goff =5,6 w , v ce = 600v, t j = 125c 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge =15v , i c = 150a , v ce = 600v , t j = 125c 6(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 44,54 33,9 21,52 0,04 t i [sec] : igbt 0,006 0,029 0,043 1,014 r i [k/kw] : diode 68,24 101,68 52,66 27,42 t i [sec] : diode 0,006 0,035 0,033 0,997 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = 15v, r g = 5,6 ohm, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip 7(8) seriendatenblatt_BSM150GAL120DLC.xls
technische information / technical information igbt-module igbt-modules BSM150GAL120DLC 8(8) seriendatenblatt_BSM150GAL120DLC.xls
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